JPH0397924U - - Google Patents
Info
- Publication number
- JPH0397924U JPH0397924U JP506190U JP506190U JPH0397924U JP H0397924 U JPH0397924 U JP H0397924U JP 506190 U JP506190 U JP 506190U JP 506190 U JP506190 U JP 506190U JP H0397924 U JPH0397924 U JP H0397924U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- reaction chamber
- spherical
- cylindrical
- microwaves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP506190U JPH0397924U (en]) | 1990-01-25 | 1990-01-25 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP506190U JPH0397924U (en]) | 1990-01-25 | 1990-01-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0397924U true JPH0397924U (en]) | 1991-10-09 |
Family
ID=31508781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP506190U Pending JPH0397924U (en]) | 1990-01-25 | 1990-01-25 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0397924U (en]) |
-
1990
- 1990-01-25 JP JP506190U patent/JPH0397924U/ja active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2703432B2 (ja) | ペロブスカイト型酸化物膜のドライエッチング方法 | |
JPH0397924U (en]) | ||
KR100630916B1 (ko) | 진동 구조체 자이로스코프의 제조 방법 | |
KR20050038898A (ko) | 반도체 기판의 건식 식각 장치 | |
EP0940844A3 (en) | Integrated circuit fabrication | |
JPH1048454A (ja) | 光ファイバの位置決め・保持方法及び装置 | |
JPH0741155Y2 (ja) | プラズマエッチング装置 | |
JPH0379422U (en]) | ||
JPH0176032U (en]) | ||
JPH02138426U (en]) | ||
JP3314409B2 (ja) | プラズマ生成装置 | |
JPH0296332A (ja) | ドライエッチング装置 | |
JPS59166674A (ja) | プラズマエツチング方法 | |
JPH0379421U (en]) | ||
JPS6247132A (ja) | 平行平板型ドライエツチング装置 | |
KR20020093214A (ko) | 반도체 식각설비의 상부전극구조 | |
JPH0456332U (en]) | ||
KR20070036215A (ko) | 반도체소자 제조용 건식식각장치 | |
JPH06181179A (ja) | プラズマ処理装置 | |
JPH0313733U (en]) | ||
Matsutani et al. | Vertical and smooth microfabrication of InP using simple high-density plasma system with SmCo ring magnet | |
JPH0654300U (ja) | マイクロ波プラズマ装置 | |
JPH0516657B2 (en]) | ||
JPH04348543A (ja) | 静電吸着装置 | |
JPH055370B2 (en]) |